@article{ref1,
title="Bombardment-induced suicide formation at rhenium-silicon interfaces studied by XPS and TEM",
journal="Fresenius' Journal of Analytical Chemistry",
year="1999",
author="Reiche, R. and Oswald, S. and Hofman, D. and Thomas, J. and Wetzig, K.",
volume="365",
number="1-3",
pages="76-82",
abstract="For further evaluation of photoemission properties of argon ion bombarded rhenium-silicon thin films pure element Re(21 nm) / Si(39 nm) / Re(21 nm) layer sandwiches were investigated on Si(111) substrates. TEM cross sectioning revealed abrupt interfaces between the polycrystalline Re layers and the amorphous Si layer in the as-deposited sample. In XPS sputter depth profiling the interfaces were severely broadened. This is not just a result of the finite electron escape depth together with atomic mixing and preferential sputtering which was demonstrated with the dynamic Monte Carlo simulation program T-DYN, but mainly caused by topographic effects and suicide formation. Factor analysis of XPS spectra results in two Re-Si principal components which can be ascribed to suicide bonding. Accordingly the valence band changes are caused by different bonding configurations. Bombardment-induced suicide formation is proved by TEM investigations of a selected cross-sectioned sandwich. Due to preferential bombardment-induced effects Re2Si is formed at the Re/Si interfaces in contrast to the ReSi2 growth on thermal heating. This is discussed in terms of the interface composition and the effective heat of formation (EHF) model. © Springer-Verlag 1999.<p /><p>Language: en</p>",
language="en",
issn="0937-0633",
doi="10.1007/s002160051448",
url="http://dx.doi.org/10.1007/s002160051448"
}