@article{ref1,
title="Phase transformation during the solid-phase growth of manganese silicides",
journal="Acta physica Sinica [Wu li xue bao]",
year="2002",
author="Xie, E.-q. and Wang, W.-w. and Jiang, N. and He, D.-y.",
volume="51",
number="4",
pages="e876-e876",
abstract="Manganese silicide thin films have been prepared on n-type Si(100) wafers by solid-phase reaction. The phase transformation has been characterized by X-ray diffraction, in-situ resistivity and Fourier infrared transmittance measurements. It was shown that two manganese silicide phases have been sequentially formed by the reaction of thin layer Mn with Si substrate at different infrared radiation stages. The crystallization of the MnSi occurs at 410°C, while MnSi/MnSi1.73 phase transformation temperature is 530°C. Fourier transform infrared spectra have shown the characteristic phonon bands of the different structural phases of manganese suicides formed at different temperatures.<p /><p>Language: zh</p>",
language="zh",
issn="1000-3290",
doi="",
url="http://dx.doi.org/"
}