@article{ref1,
title="Ag metallization on suicides with nitride barriers",
journal="Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
year="2004",
author="Mitan, M.M. and Kim, H.C. and Alford, T.L. and Malgas, G.F. and Adams, D.",
volume="22",
number="6",
pages="2804-2810",
abstract="The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures. © 2004 American Vacuum Society.<p /><p>Language: en</p>",
language="en",
issn="1071-1023",
doi="10.1116/1.1815312",
url="http://dx.doi.org/10.1116/1.1815312"
}