@article{ref1,
title="Abnormal oxidation of nickel silicide on N-type substrate and effect of preamorphization implantation",
journal="Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
year="2004",
author="Yun, J.-g. and Soon-Young, O.H. and Hee-Hwan, J.I. and Huang, B.-f. and Park, Y.-h. and Wang, J.-s. and Park, S.-h. and Bae, T.-s. and Lee, H.-d.",
volume="43",
number="10",
pages="6998-6999",
abstract="In this study, the abnormal oxidation of nickel suicide on an n-type substrate and the suppression of the abnormal oxidation by N2 preamorphization implantation (PAI) have been investigated. Although there is little difference in the sheet resistance regardless of dopants just after the silicidation, a strong dependence was observed after high-temperature postsilicidation annealing. Only the As-doped source/drain was oxidized during the postsilicidation annealing, and silicide properties were severely degraded. To prevent the unintended oxidation of the As-doped source/drain, N2 or Ge PAI was implemented and the thermal stability was greatly improved by N2 PAI with a Ti capping layer.<p /><p>Language: en</p>",
language="en",
issn="0021-4922",
doi="10.1143/JJAP.43.6998",
url="http://dx.doi.org/10.1143/JJAP.43.6998"
}