@article{ref1,
title="Boron-carbide barrier layers in scandium-silicon multilayers",
journal="Thin Solid Films",
year="2004",
author="Jankowski, A.F. and Saw, C.K. and Walton, C.C. and Hayes, J.P. and Nilsen, J.",
volume="469-470",
number="SPEC. ISS.",
pages="372-376",
abstract="Scandium-silicon (Sc/Si) multilayer structures show promise to efficiently reflect 45-50-nm wavelength X-rays at normal incidence. Barrier layers have been added at each interface to minimize the formation and growth of suicide compounds that broaden interfaces and, consequently, cause a change in the layer spacing and loss of reflectivity. Although tungsten (W) is an effective diffusion barrier, its high absorption causes a loss of reflectivity. We now evaluate the use of another refractory material for the barrier layer, boron carbide (B4C), which is a stable ceramic. The multilayer microstructure and its stability are evaluated using microscopy and diffraction methods. It is found that the use of B4C enhances the thermal stability of Sc/Si multilayers to an extent equivalent that offered by W barrier layers with only a few percent reduction in the reflectivity. © 2004 Elsevier B.V. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="0040-6090",
doi="10.1016/j.tsf.2004.08.153",
url="http://dx.doi.org/10.1016/j.tsf.2004.08.153"
}