@article{ref1,
title="Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films",
journal="Semiconductors",
year="2004",
author="Persheyev, S.K. and Drapacz, P.R. and Rose, M.J. and Fitzgerald, A.G.",
volume="38",
number="3",
pages="344-346",
abstract="The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface. © 2004 MAIK &quot;Nauka/ Interperiodica&quot;.<p /><p>Language: en</p>",
language="en",
issn="1063-7826",
doi="10.1134/1.1682341",
url="http://dx.doi.org/10.1134/1.1682341"
}