@article{ref1,
title="Characterization of crystallographic properties of SMC poly Si using electron backscattered diffraction",
journal="Journal of microscopy",
year="2004",
author="Kim, D.-i. and Oh, K.H. and Lee, H.-c. and Chang, Y.J. and Sohn, W.S. and Jang, J.",
volume="215",
number="2",
pages="121-126",
abstract="Crystallographic properties of suicide mediated crystallization (SMC) polycrystalline silicon (poly Si) and excimer laser annealing (ELA) poly Si were studied by electron backscattered diffraction. Large-grain sized poly Si with a large fraction of low-angle grain boundaries was acquired by SMC, and small-grain sized poly Si with high-angle grain boundaries especially around 60° was acquired by ELA. The thin film transistor (TFT) device characteristics were investigated in view of short-range crystallinity (pattern quality) and long-range crystallinity (misorientation distribution) of the specimens. Short-range crystallinity did not significantly affect the TFT device characteristics, and long-range crystallinity considering the low energy level of special boundaries could be better related to the TFT device characteristics of poly Si.<p /><p>Language: en</p>",
language="en",
issn="0022-2720",
doi="10.1111/j.0022-2720.2004.01360.x",
url="http://dx.doi.org/10.1111/j.0022-2720.2004.01360.x"
}