@article{ref1,
title="Effect of a Ge interlayer on the high-temperature behavior of NiSi films",
journal="Journal of applied physics",
year="2004",
author="He, Y. and Liu, X.L. and Feng, J.Y. and Wu, Q.L.",
volume="96",
number="11",
pages="6928-6930",
abstract="The effect of a thin Ge interlayer on the formation of Ni silicides on (100)Si substrates has been investigated. X-ray diffraction shows a remarkable increase of the nucleation temperature of NiSi2 in the presence of the Ge interlayer. Four-probe measurements show that the sheet resistance of suicide formed in Ni/Ge/Si system remains stable up to 850°C, while the sheet resistance of suicide formed in Ni/Si system presents a significant increase at 750°C. Scanning electron microscopy indicates that island formation is not observed in the NiSi film grown on Ge/Si substrate annealing at 800°C. The classical nucleation theory is employed to explain the increased temperature of the nucleation of NiSi2 in the Ni/Ge-Si system. © 2004 American Institute of Physics.<p /><p>Language: en</p>",
language="en",
issn="0021-8979",
doi="10.1063/1.1810632",
url="http://dx.doi.org/10.1063/1.1810632"
}