@article{ref1,
title="Fabrication of well-aligned Er nanowires on vicinal silicon(001) surfaces",
journal="Journal of physics. Condensed matter",
year="2004",
author="Cai, Q. and Zhou, W.",
volume="16",
number="39",
pages="6835-6840",
abstract="Using vicinal Si(001) surfaces with a 4° miscut angle towards the direction as templates, an approach to fabricating well-aligned nanowires of Er suicide is demonstrated. At Er coverage of 0.1-0.3 nm and annealing temperature of 600-700°C, ordered nanowires are obtained on the surface several hundreds of nanometres in length. STM images and LEED patterns reveal that the nanowires are all oriented along the [̄110] direction. The size, shape and density of the nanowires depends upon annealing temperature and duration as well as coverage. The experimental evidence also suggests a transition of bulk atomic structures between AlB2 and ThSi2 for Er suicide nanostructures. The alignment of the Er nanowires will make the measurements of their physical properties practicable.<p /><p>Language: en</p>",
language="en",
issn="0953-8984",
doi="10.1088/0953-8984/16/39/016",
url="http://dx.doi.org/10.1088/0953-8984/16/39/016"
}