@article{ref1,
title="Effects of annealing on the structure of the Au/Si(1 1 1)-H interface",
journal="Surface Science",
year="2004",
author="Flammini, R. and Wiame, F. and Belkhou, R. and Taleb-Ibrahimi, A. and Gregoratti, L. and Barinov, A. and Marsi, M. and Kiskinova, M.",
volume="564",
number="1-3",
pages="121-130",
abstract="The interaction between the hydrogenated silicon surface and gold, has been investigated as a function of temperature by means of high resolution core-level photoelectron spectroscopy (PES) and scanning photoelectron microscopy (SPEM). We have studied the effect of the annealing on a sample obtained by deposition of 1.5 ML of gold on an in-situ hydrogenated Si(111)-7 × 7 substrate. In order to characterize the substrate as well as the adsorbate, both Si2p and Au4f core-levels have been analysed. Our results show that, after annealing at 550°C, bidimensional (2D) and tridimensional (3D) phases coexist. The two phases have been spectroscopically characterized. On the 3D phase (micrometer sized islands) a bulk-Au component is present in the Au4f7/2 spectrum. We argue that the presence of the hydrogen layer promoted the formation of the islands. We propose a model for the temperature evolution of this interface. © 2004 Elsevier B.V. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="0039-6028",
doi="10.1016/j.susc.2004.06.200",
url="http://dx.doi.org/10.1016/j.susc.2004.06.200"
}