@article{ref1,
title="Growth of an Eu-Si(111) Thin Film Structure: The Stage of Silicide Formation",
journal="Physics of the Solid State",
year="2004",
author="Krachino, T.V. and Kuz'min, M.V. and Loginov, M.V. and Mittsev, M.A.",
volume="46",
number="3",
pages="563-568",
abstract="Silicide formation in thin films produced by depositing Eu atoms on the Si(111) surface is studied using LEED, Auger electron spectroscopy, contact potential difference, and isothermal thermal-desorption spectroscopy. It is shown that if Eu is deposited on a substrate at room temperature, the growing film is disordered and consists of almost pure Eu. At high temperatures (T ≥ 500 K), the Eu-Si(111) system forms through the Stranski-Krastanow mechanism; namely, first a two-dimensional transition layer (reconstruction) with the (2×1) structure forms and then three-dimensional silicide crystallites grow on it. A specific feature of this system is a low rate of diffusion of Si atoms in the europium suicides. This feature accounts for the concentration gradient of Si atoms across the suicide film thickness and, as a consequence, the multiphase film composition. © 2004 MAIK &quot;Nauka/ Interperiodica&quot;.<p /><p>Language: en</p>",
language="en",
issn="1063-7834",
doi="10.1134/1.1687879",
url="http://dx.doi.org/10.1134/1.1687879"
}