@article{ref1,
title="Electroluminescence and Response Characterization of β-FeSi 2-Based Light-Emitting Diodes",
journal="Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
year="2004",
author="Chu, S. and Hirohada, T. and Kan, H. and Hiruma, T.",
volume="43",
number="2 A",
pages="L154-L156",
abstract="β-FeSi2-based light-emitting devices were prepared by growing continuous and highly oriented β-FeSi2 films on Si(111) substrates using RF magnetron sputtering deposition with an Fe target. Response characterization of electroluminescence (EL) was carried out by measuring the rise time of the EL signal at room temperature, giving a characteristic time of approximately 15ns for the device size of 1.5mm × 1.5 mm. Temperature-dependent EL measurement was carried out from 10 K to 300 K and it was found that a 1.5 urn band EL signal underwent thermal quenching with an active energy of 0.11±0.01eV, whereas a 1.1 μm band EL signal appeared at around 200 K and its intensity increased with temperature, indicating a spatial change in emission area. The use of n-type β-FeSi2 as an active layer is proposed based on the consideration of current injection mode.<p /><p>Language: en</p>",
language="en",
issn="0021-4922",
doi="10.1143/jjap.43.l154",
url="http://dx.doi.org/10.1143/jjap.43.l154"
}