@article{ref1,
title="Formation of thermally stable Ni monosilicide using an inductively coupled plasma process",
journal="Journal of electronic materials",
year="2004",
author="Ok, Y.-w. and Choi, C.-j. and Maeng, J.-t. and Seong, T.-y.",
volume="33",
number="8",
pages="916-922",
abstract="The effect of argon plasma treatment on the structural and electrical properties of Ni suicides has been investigated. Electron-beam-evaporated Ni films on Si substrates are Ar plasma-treated by an inductively coupled plasma (ICP) reactor. For silicidation reactions, all the samples with and without the Ar plasma treatment are rapid-thermal annealed (RTA) at temperatures of 500-750°C in a nitrogen ambient. It is shown that the Ar plasma-treated samples produce better electrical and structural properties across the whole temperature range as compared with the untreated samples. It is further shown that the Ar plasma-treated samples contain nitrogen, which plays an important role in improving the morphological stability and the electrical properties of the suicide films.<p /><p>Language: en</p>",
language="en",
issn="0361-5235",
doi="10.1007/s11664-004-0221-8",
url="http://dx.doi.org/10.1007/s11664-004-0221-8"
}