@article{ref1,
title="Evolution of the Co-N/Ti/Si system in magnetron sputtering of Co onto a heated Ti/Si(100) substrate",
journal="Russian Microelectronics",
year="2004",
author="Vasiliev, A.G. and Vasiliev, A.L. and Zakharov, R.A. and Orlikovsky, A.A. and Horin, I.A. and Eindou, M.",
volume="33",
number="1",
pages="1-6",
abstract="The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon-nitrogen atmosphere. A model is proposed that accounts for the nature of suicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSix layer to a far greater extent than by the Ti layer.<p /><p>Language: en</p>",
language="en",
issn="1063-7397",
doi="10.1023/B:RUMI.0000011093.63543.a8",
url="http://dx.doi.org/10.1023/B:RUMI.0000011093.63543.a8"
}