@article{ref1,
title="Photoelectron spectroscopy of thin-film Yb-Si(100) structures formed by solid phase epitaxy at 800 K",
journal="Technical Physics Letters",
year="2004",
author="Vyalikh, D.V. and Kuzmin, M.V. and Mittsev, M.A. and Molodtsov, S.L.",
volume="30",
number="9",
pages="738-740",
abstract="Thin-fllm Yb-Si(100) structures formed by solid phase epitaxy at 800 K were studied by photoelectron spectroscopy using a synchrotron radiation source. Analysis of the photoelectron spectra showed that, in the range of submonolayer ytterbium coverages 6, the formation of two-dimensional ordered structures is accompanied by the destruction of surface dimers existing on a clean (2 × l)-reconstructed Si(100) surface and (starting with the minimum coverage 9 = 0.15) by the nucleation of suicides. In the layered structure of silicides, there is charge transfer from ytterbium to silicon layers. It is concluded that this charge transfer eventually accounts for the characteristic trident shape of the spectrum of Si 2p core level in suicides. © 2004 MAIK &quot;Nauka/Interperiodica&quot;.<p /><p>Language: en</p>",
language="en",
issn="1063-7850",
doi="10.1134/1.1804581",
url="http://dx.doi.org/10.1134/1.1804581"
}