@article{ref1,
title="Self-forming silicide/SiGe-based tube structure on Si(001) substrates",
journal="Thin Solid Films",
year="2004",
author="Chen, H.C. and Liao, K.F. and Lee, S.W. and Chen, L.J.",
volume="469-470",
number="SPEC. ISS.",
pages="483-486",
abstract="Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic suicide (NiSi2) may find applications in advanced devices. © 2004 Elsevier B.V. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="0040-6090",
doi="10.1016/j.tsf.2004.06.167",
url="http://dx.doi.org/10.1016/j.tsf.2004.06.167"
}