@article{ref1,
title="Selective silicidation of Co using silane or disilane for anti-oxidation barrier layer in Cu metallization",
journal="Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",
year="2004",
author="Noda, S. and Hirai, R. and Komiyama, H. and Shimogaki, Y.",
volume="43",
number="9 A",
pages="6001-6007",
abstract="Aiming to realize a conductive passivation layer for copper interconnection, the solid-gas reactions of cobalt films with silane and with disilane to form cobalt suicides are experimentally investigated. X-ray photoelectron spectroscopy revealed that cobalt suicides layers of up to 6 nm thickness can be selectively formed in the reaction at 473-673 K within 5 min without detectable silicon deposition on silicon dioxide, a common inter-metal dielectric layer. Rapid thermal oxidation experiments revealed that the silicided cobalt layers had better anti-oxidation performance than untreated cobalt layers, and the effect of silicidation was to suppress copper out-diffusion through the cobalt layers. Because cobalt-based alloys can be selectively electroless-plated on copper, selective silicidation of cobalt layers will be easily incorporated into device processing.<p /><p>Language: en</p>",
language="en",
issn="0021-4922",
doi="10.1143/JJAP.43.6001",
url="http://dx.doi.org/10.1143/JJAP.43.6001"
}