@article{ref1,
title="Thin manganese films on Si(111)-(7 × 7): Electronic structure and strain in suicide formation",
journal="Journal of Physics D: Applied Physics",
year="2004",
author="Kumar, A. and Tallarida, M. and Hansmann, M. and Starke, U. and Horn, K.",
volume="37",
number="7",
pages="1083-1090",
abstract="The electronic and structural properties of thin epitaxial Mn films on Si(111)-(7×7) and their suicide reaction are studied by means of low-energy electron diffraction, scanning tunnelling microscopy (STM) and photoemission spectroscopy (PES). The deposition of Mn at room temperature initially results in the growth of islands. The metal-silicon reaction already occurs at this temperature, which is further enhanced by annealing up to 400°C, leading to the formation of manganese suicide and turning islands into nearly closed films at higher coverage. A pseudo-(1×1) phase develops for Mn films of up to 1 monolayer (ML) thickness. For films of higher thicknesses of up to 5 ML, a (√3×√3)R30° phase is observed. STM images show that then the suicide film is almost closed and exhibits a strain relief network reflecting an incommensurate interface structure. PES reveals that the (1×1) phase is semiconducting while the (√3×√3)R30° phase is metallic. For both phases, Si 2p core level photoemission data indicate that the surface is probably terminated by Si atoms.<p /><p>Language: en</p>",
language="en",
issn="0022-3727",
doi="10.1088/0022-3727/37/7/021",
url="http://dx.doi.org/10.1088/0022-3727/37/7/021"
}