@article{ref1,
title="Physical and electrical properties of sputtered Ru2Si3/Si structures",
journal="Semiconductor Science and Technology",
year="2003",
author="Jelenkovic, E.V. and Tong, K.Y. and Cheung, W.Y. and Wong, S.P.",
volume="18",
number="6",
pages="454-459",
abstract="Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed.<p /><p>Language: en</p>",
language="en",
issn="0268-1242",
doi="10.1088/0268-1242/18/6/311",
url="http://dx.doi.org/10.1088/0268-1242/18/6/311"
}