@article{ref1,
title="Guided formation of a Sub-10 nm suicide dot array on an area patterned by electron-beam lithography",
journal="Advanced materials",
year="2007",
author="Wi, J.-s. and Lee, T.-y. and Kim, H.-m. and Lee, H.-s. and Nam, S.-w. and Shin, I.J. and Shin, K.H. and Kim, K.-b.",
volume="19",
number="21",
pages="3469-3472",
abstract="A study was conducted to demonstrate a new method for fabricating high-density and sub-10 nm Pd2Si dot in a patterned array. The dots were formed by the interaction between Pd and amorphous silicon (Si), with the aid of e-beam exposure. The study also demonstrated the new method that defined the area in which the dots were formed and enabled the formation of high-density sub-10 nm dots below the resolution limit of e-beam patterning in a single a single step process. The e-beam exposures for the nanometer scale patterns were conducted with a LEICA LION-LVI, with a beam radius of approximately 1 nm. The samples collected after e-beam exposures were analyzed by transmission electron microscopy (TEM). The temperature was maintained below 100°C to minimize any interfacial reaction during the preparation of the TEM specimen.<p /><p>Language: en</p>",
language="en",
issn="0935-9648",
doi="10.1002/adma.200701043",
url="http://dx.doi.org/10.1002/adma.200701043"
}