@article{ref1,
title="Proposed Ultrahigh Frequency Microstrip Utilising Buried Suicide Groundplane",
journal="Electronics Letters",
year="1990",
author="Goosen, K.W. and white, A.E. and Short, K.T.",
volume="26",
number="1",
pages="49-50",
abstract="Recently it has become possible to produce buried singlecrystal silicide layers in silicon on which epitaxial silicon may be grown. We show that if such a layer is used as a groundplane in a microstrip configuration, ultra-high-speed signals (e.g. 100 GHz) can be propagated with far less dispersion than on standard microstrip, by virtue of the close proximity of the groundplane to the centre conductor. © 1990, The Institution of Electrical Engineers. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="0013-5194",
doi="10.1049/el:19900032",
url="http://dx.doi.org/10.1049/el:19900032"
}