@article{ref1,
title="Platinum suicide fusion bonding",
journal="Electronics Letters",
year="1991",
author="Ismail, M.S. and Bower, R.W.",
volume="27",
number="13",
pages="1153-1155",
abstract="Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bond-able, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers. © 1991, The Institution of Electrical Engineers. All rights reserved.<p /><p>Language: en</p>",
language="en",
issn="0013-5194",
doi="10.1049/el:19910719",
url="http://dx.doi.org/10.1049/el:19910719"
}