TY  - JOUR
PY  - 2004//
TI  - Ag metallization on suicides with nitride barriers
JO  - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A1  - Mitan, M.M.
A1  - Kim, H.C.
A1  - Alford, T.L.
A1  - Malgas, G.F.
A1  - Adams, D.
SP  - 2804
EP  - 2810
VL  - 22
IS  - 6
N2  - The thermal stability of Ag thin films on Ti-O-N/silicides (CoSi10.1116/1.1811628 and NiSi) is investigated with various characterization techniques in this study. A Ti-O-N film was used as a diffusion barrier for Ag metallization. Suicide thin films are prepared by solid phase reactions utilizing metal/silicon bilayer structure. Rutherford backscattering spectrometry (RBS) of annealed films reveals Ag film changes to occur at 650°C. Optical microscopy shows voids in the Ag film on the Ti-O-N diffusion barrier for temperature above 600°C. Increasing anneal temperature up to 700°C produces high density of voids in Ag films. Atomic force microscopy (AFM) shows the morphology of the voids that occur in the Ag film on the Ti-O-N barrier. RBS indicates some amount of Ag loss from the annealed samples at high temperatures. Secondary ion mass spectroscopy (SIMS) depth profiling reveals Ag diffusions to Ti-O-N/silicides/Si structures. We discuss the thermal stability and failure mechanism of Ag films on Ti-O-N/silicides/Si annealed at various temperatures. © 2004 American Vacuum Society.<p /> <p>Language: en</p>
LA  - en
SN  - 1071-1023
UR  - http://dx.doi.org/10.1116/1.1815312
ID  - ref1
ER  -