TY  - JOUR
PY  - 2004//
TI  - Diffusion of Chromium in Thin Hydrogenated Amorphous Silicon Films
JO  - Semiconductors
A1  - Persheyev, S.K.
A1  - Drapacz, P.R.
A1  - Rose, M.J.
A1  - Fitzgerald, A.G.
SP  - 344
EP  - 346
VL  - 38
IS  - 3
N2  - The diffusion of a chromium bottom contact has been studied through thin 10-nm amorphous silicon film. The concentration of the diffused impurity has been analyzed by an X-ray photon spectroscopy technique and the diffusion coefficient was estimated. Diffusion annealing was carried out in vacuum (10-6 mTorr), the temperature was kept at 400°C, and the annealing time was varied from 0 to 300 min. The authors propose that diffusion of chromium in thin hydrogenated amorphous film is limited by suicide formation at the metal-silicon interface. © 2004 MAIK "Nauka/ Interperiodica".<p /> <p>Language: en</p>
LA  - en
SN  - 1063-7826
UR  - http://dx.doi.org/10.1134/1.1682341
ID  - ref1
ER  -