TY - JOUR PY - 2004// TI - Fabrication of well-aligned Er nanowires on vicinal silicon(001) surfaces JO - Journal of physics. Condensed matter A1 - Cai, Q. A1 - Zhou, W. SP - 6835 EP - 6840 VL - 16 IS - 39 N2 - Using vicinal Si(001) surfaces with a 4° miscut angle towards the direction as templates, an approach to fabricating well-aligned nanowires of Er suicide is demonstrated. At Er coverage of 0.1-0.3 nm and annealing temperature of 600-700°C, ordered nanowires are obtained on the surface several hundreds of nanometres in length. STM images and LEED patterns reveal that the nanowires are all oriented along the [̄110] direction. The size, shape and density of the nanowires depends upon annealing temperature and duration as well as coverage. The experimental evidence also suggests a transition of bulk atomic structures between AlB2 and ThSi2 for Er suicide nanostructures. The alignment of the Er nanowires will make the measurements of their physical properties practicable.
Language: en
LA - en SN - 0953-8984 UR - http://dx.doi.org/10.1088/0953-8984/16/39/016 ID - ref1 ER -