TY  - JOUR
PY  - 2004//
TI  - Growth of an Eu-Si(111) Thin Film Structure: The Stage of Silicide Formation
JO  - Physics of the Solid State
A1  - Krachino, T.V.
A1  - Kuz'min, M.V.
A1  - Loginov, M.V.
A1  - Mittsev, M.A.
SP  - 563
EP  - 568
VL  - 46
IS  - 3
N2  - Silicide formation in thin films produced by depositing Eu atoms on the Si(111) surface is studied using LEED, Auger electron spectroscopy, contact potential difference, and isothermal thermal-desorption spectroscopy. It is shown that if Eu is deposited on a substrate at room temperature, the growing film is disordered and consists of almost pure Eu. At high temperatures (T ≥ 500 K), the Eu-Si(111) system forms through the Stranski-Krastanow mechanism; namely, first a two-dimensional transition layer (reconstruction) with the (2×1) structure forms and then three-dimensional silicide crystallites grow on it. A specific feature of this system is a low rate of diffusion of Si atoms in the europium suicides. This feature accounts for the concentration gradient of Si atoms across the suicide film thickness and, as a consequence, the multiphase film composition. © 2004 MAIK "Nauka/ Interperiodica".<p /> <p>Language: en</p>
LA  - en
SN  - 1063-7834
UR  - http://dx.doi.org/10.1134/1.1687879
ID  - ref1
ER  -