TY - JOUR PY - 2004// TI - Evolution of the Co-N/Ti/Si system in magnetron sputtering of Co onto a heated Ti/Si(100) substrate JO - Russian Microelectronics A1 - Vasiliev, A.G. A1 - Vasiliev, A.L. A1 - Zakharov, R.A. A1 - Orlikovsky, A.A. A1 - Horin, I.A. A1 - Eindou, M. SP - 1 EP - 6 VL - 33 IS - 1 N2 - The surface-diffusion interaction is studied experimentally between cobalt and a heated Ti/Si(100) substrate under reactive magnetron sputtering in an argon-nitrogen atmosphere. A model is proposed that accounts for the nature of suicide formation in the Co/Ti/Si system by volume and surface-diffusion reactions between cobalt and the substrate. It is shown that the diffusion of cobalt into the silicon is impeded by the TiSix layer to a far greater extent than by the Ti layer.
Language: en
LA - en SN - 1063-7397 UR - http://dx.doi.org/10.1023/B:RUMI.0000011093.63543.a8 ID - ref1 ER -