TY  - JOUR
PY  - 2004//
TI  - Selective silicidation of Co using silane or disilane for anti-oxidation barrier layer in Cu metallization
JO  - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
A1  - Noda, S.
A1  - Hirai, R.
A1  - Komiyama, H.
A1  - Shimogaki, Y.
SP  - 6001
EP  - 6007
VL  - 43
IS  - 9 A
N2  - Aiming to realize a conductive passivation layer for copper interconnection, the solid-gas reactions of cobalt films with silane and with disilane to form cobalt suicides are experimentally investigated. X-ray photoelectron spectroscopy revealed that cobalt suicides layers of up to 6 nm thickness can be selectively formed in the reaction at 473-673 K within 5 min without detectable silicon deposition on silicon dioxide, a common inter-metal dielectric layer. Rapid thermal oxidation experiments revealed that the silicided cobalt layers had better anti-oxidation performance than untreated cobalt layers, and the effect of silicidation was to suppress copper out-diffusion through the cobalt layers. Because cobalt-based alloys can be selectively electroless-plated on copper, selective silicidation of cobalt layers will be easily incorporated into device processing.<p /> <p>Language: en</p>
LA  - en
SN  - 0021-4922
UR  - http://dx.doi.org/10.1143/JJAP.43.6001
ID  - ref1
ER  -