TY  - JOUR
PY  - 2003//
TI  - Physical and electrical properties of sputtered Ru2Si3/Si structures
JO  - Semiconductor Science and Technology
A1  - Jelenkovic, E.V.
A1  - Tong, K.Y.
A1  - Cheung, W.Y.
A1  - Wong, S.P.
SP  - 454
EP  - 459
VL  - 18
IS  - 6
N2  - Ruthenium suicide films were formed on silicon wafers by sputtering from either ruthenium or ruthenium suicide targets with subsequent annealing in the temperature range of 400-800 °C. The growth of Ru2Si3 was confirmed by x-ray diffraction, Raman spectroscopy and ellipsometric measurements. Ru/Si and Ru2Si3/Si vertical heterostructure diodes were fabricated and the barrier height was extracted through current - voltage measurements. Good rectifying properties of polycrystalline Ru2Si3 /Si structures were observed.<p /> <p>Language: en</p>
LA  - en
SN  - 0268-1242
UR  - http://dx.doi.org/10.1088/0268-1242/18/6/311
ID  - ref1
ER  -