TY  - JOUR
PY  - 1992//
TI  - Lateral growth of cobalt suicide observed by an MeV helium ion microprobe
JO  - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
A1  - Kinomura, A.
A1  - Takai, M.
A1  - Namba, S.
A1  - Ryssel, H.
A1  - Tsien, P.H.
A1  - Burte, E.
A1  - Satou, M.
A1  - Chayahara, A.
SP  - 770
EP  - 773
VL  - 64
IS  - 1-4
N2  - Lateral growth of cobalt suicide on silicon was investigated by a 1.5 MeV helium ion microprobe with Rutherford backscattering (RBS). Lateral and cross-sectional cobalt distributions in cobalt suicide patterns were directly observed by RBS-mapping and RBS-tomography methods. Comparison between arsenic-implanted (200 keV, 7 ×1015 As+ cm2) and unimplanted patterns revealed that ion beam mixing by arsenic implantation suppressed the lateral growth of cobalt suicide during rapid thermal annealing at 1000°C for 1 s. © 1992.<p /> <p>Language: en</p>
LA  - en
SN  - 0168-583X
UR  - http://dx.doi.org/10.1016/0168-583X(92)95575-C
ID  - ref1
ER  -