TY  - JOUR
PY  - 1991//
TI  - Platinum suicide fusion bonding
JO  - Electronics Letters
A1  - Ismail, M.S.
A1  - Bower, R.W.
SP  - 1153
EP  - 1155
VL  - 27
IS  - 13
N2  - Silicide direct bonding has been accomplished between silicon PtSi coated wafers and both PtSi coated and uncoated silicon wafers. Successful bonding occurred when the PtSi surface was rendered hydrophilic by a hot aqua regia selective etching and cleaning process. The PtSi provides bond-able, relatively low resistance paths which provide electrical interconnections between circuit elements on the bonded pair of wafers. © 1991, The Institution of Electrical Engineers. All rights reserved.<p /> <p>Language: en</p>
LA  - en
SN  - 0013-5194
UR  - http://dx.doi.org/10.1049/el:19910719
ID  - ref1
ER  -