TY  - JOUR
PY  - 1991//
TI  - The Influence of Impurities on Cobalt Silicide Formation
JO  - Journal of the Electrochemical Society
A1  - Freitas, W.J.
A1  - Swart, J.W.
SP  - 3067
EP  - 3070
VL  - 138
IS  - 10
N2  - Cobalt suicide formation has been studied using thin films of Co on Si wafers with different impurity contents in the metal and with thin or thick native oxide at the Co/Si interface. The incorporation of impurities into the film was controlled by changes of the pressure during Co deposition. Two RTP systems with two different annealing ambients and heat sources were used for silicidation. For Co films with low contaminant level, thin or thick native oxide can be dissolved and good quality CoSi2 is formed. For Co films with high impurity level in the presence of thick native oxide, the silicidation can be performed, delayed, or even inhibited, depending on film thickness and annealing conditions. © 1991, The Electrochemical Society, Inc. All rights reserved.<p /> <p>Language: en</p>
LA  - en
SN  - 0013-4651
UR  - http://dx.doi.org/10.1149/1.2085368
ID  - ref1
ER  -